
NPN silicon bipolar junction transistor, surface mountable in a SOT-23 plastic package. Features a 45V collector-emitter breakdown voltage, 0.8A maximum collector current, and 700mV collector-emitter saturation voltage. Operates with a 100MHz transition frequency and 50V collector-base voltage. Compliant with RoHS and REACH SVHC standards, this component is lead-free and designed for automotive applications (AEC-Q101).
Diodes BC817-16-7-F technical specifications.
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