NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 160 and a transition frequency of 100MHz. Packaged in a compact SOT-323 surface-mount plastic package, this component is RoHS and REACH SVHC compliant.
Frequency100MHz
PackageSOT-323
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BC817-25W-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
160
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
100MHz
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC817-25W-7 Datasheet
Download the complete datasheet for Diodes BC817-25W-7 to view detailed technical specifications.
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