NPN silicon bipolar junction transistor for general-purpose applications. Features a 65V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a 300MHz transition frequency and a minimum hFE of 110. Packaged in a compact SOT-323 surface-mount plastic package, this component is lead-free and RoHS compliant.
Frequency100MHz
PackageSOT-323
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BC846AW-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
200mV
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Continuous Collector Current
100mA
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
110
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
300MHz
Type
General Purpose
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC846AW-7-F Datasheet
Download the complete datasheet for Diodes BC846AW-7-F to view detailed technical specifications.
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