NPN silicon bipolar junction transistor for general-purpose applications. Features a 45V collector-emitter breakdown voltage and 100mA continuous collector current. Operates with a 100MHz transition frequency and offers a minimum hFE of 110. Housed in an ultra-small SOT-523 plastic package for surface mounting, with a maximum power dissipation of 150mW. Compliant with RoHS standards.
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Diodes BC847AT-7-F technical specifications.
| Package/Case | SOT-523 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.75mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Type | General Purpose |
| DC Rated Voltage | 45V |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
| RoHS | Compliant |
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