NPN silicon bipolar junction transistor for general-purpose applications. Features a 45V collector-emitter breakdown voltage and 100mA continuous collector current. Operates with a 100MHz transition frequency and offers a minimum hFE of 110. Housed in an ultra-small SOT-523 plastic package for surface mounting, with a maximum power dissipation of 150mW. Compliant with RoHS standards.
Frequency100MHz
PackageSOT-523
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Diodes BC847AT-7-F technical specifications.
General
Package/Case
SOT-523
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Continuous Collector Current
100mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.75mm
hFE Min
110
Lead Free
Lead Free
Length
1.6mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Type
General Purpose
DC Rated Voltage
45V
Weight
7.1E-05oz
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC847AT-7-F Datasheet
Download the complete datasheet for Diodes BC847AT-7-F to view detailed technical specifications.
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