
NPN silicon bipolar junction transistor for surface mount applications. Features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current. Operates with a 100MHz transition frequency and a 600mV collector-emitter saturation voltage. Housed in an ultra-small, leadless DFN plastic package measuring 1mm x 0.6mm x 1.5mm. Rated for operation from -55°C to 150°C with 250mW power dissipation.
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Diodes BC847BLP-7 technical specifications.
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Gold |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 1mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 45V |
| Width | 0.6mm |
| RoHS | Compliant |
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