NPN silicon bipolar junction transistor for small signal applications. Features a 45V collector-emitter breakdown voltage and 100mA continuous collector current. Operates with a maximum power dissipation of 250mW and a transition frequency of 100MHz. Housed in an ultra-small, leadless plastic DFN1006-3 package with gold contact plating, suitable for surface mounting.
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Diodes BC847BLP-7B technical specifications.
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Gold |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
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