DIODES

BC847BS-7-F

Datasheet

NPN BJT Transistor, 45V VCEO, 100mA IC, 100MHz, SOT-363

Diodes

BC847BS-7-F

Name: BC847BS-7-F Diodes
Brand: Diodes
SKU: BC847BS-7-F

NPN BJT Transistor, 45V VCEO, 100mA IC, 100MHz, SOT-363

NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and a 100mA maximum collector current (IC). Operates with a 100MHz transition frequency and a 400mV collector-emitter saturation voltage. Housed in an ultra-small, 6-lead plastic SOT-363 surface mount package. RoHS compliant with tin, matte contact plating.

Frequency100MHz

PackageSOT-363

Voltage45V

MountingSurface Mount

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Technical Specifications

Diodes BC847BS-7-F technical specifications.

General

Package/Case	SOT-363
Collector Base Voltage (VCBO)	50V
Collector Emitter Breakdown Voltage	45V
Collector Emitter Saturation Voltage	400mV
Collector Emitter Voltage (VCEO)	45V
Collector-emitter Voltage-Max	400mV
Contact Plating	Tin, Matte
Emitter Base Voltage (VEBO)	5V
Frequency	100MHz
Gain Bandwidth Product	100MHz
Height	1mm
Lead Free	Lead Free
Length	2.2mm
Max Breakdown Voltage	60V
Max Collector Current	100mA
Max Frequency	100MHz
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	200mW
Mount	Surface Mount
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	NPN
Power Dissipation	200mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Transition Frequency	100MHz
Voltage	45V
Weight	0.000212oz
Width	1.35mm