NPN/PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (VCEO) and a 100mA Max Collector Current. Operates with a 300MHz Gain Bandwidth Product and 200MHz Transition Frequency. Housed in an ultra-small, surface-mount SOT-563 plastic package with tin, matte contact plating. Rated for 150mW power dissipation and a wide operating temperature range from -65°C to 150°C.
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Diodes BC847BVN-7 technical specifications.
| Package/Case | SOT-563 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 0.6mm |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Weight | 0.000106oz |
| Width | 1.2mm |
| RoHS | Compliant |
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