NPN Silicon Bipolar Junction Transistor for general-purpose amplification and switching. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 200 and a gain-bandwidth product of 300MHz. Packaged in a compact SOT-323 surface-mount plastic package, suitable for tape and reel applications. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 200mW.
Frequency300MHz
PackageSOT-323
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes BC847BW-7 technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
50V
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
45V
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
200
Length
2.2mm
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
RoHS Compliant
No
Series
BC847BW
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes BC847BW-7 Datasheet
Download the complete datasheet for Diodes BC847BW-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
