
NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a transition frequency of 300MHz and a minimum hFE of 200. Packaged in a 3-pin plastic SOT-323 surface mount package. RoHS compliant and lead-free.
Diodes BC847BW-7-F technical specifications.
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