NPN silicon bipolar junction transistor in a SOT-23 surface mount package. Features a 45V collector-emitter breakdown voltage, 100mA maximum collector current, and a 300MHz transition frequency. Offers a minimum hFE of 420 and a maximum power dissipation of 350mW. Designed for general-purpose amplification and switching applications.
Frequency300MHz
PackageSOT-23
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Diodes BC847C-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
420
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
300MHz
DC Rated Voltage
45V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC847C-7-F Datasheet
Download the complete datasheet for Diodes BC847C-7-F to view detailed technical specifications.
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