NPN silicon bipolar junction transistor in a SOT-323 plastic package. Features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current. Operates with a 300MHz transition frequency and a 600mV collector-emitter saturation voltage. Designed for surface mounting with a 200mW maximum power dissipation.
Frequency300MHz
PackageSOT-323
Current Rating100mA
MountingSurface Mount
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Technical Specifications
Diodes BC847CW-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
45V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC847CW-7-F Datasheet
Download the complete datasheet for Diodes BC847CW-7-F to view detailed technical specifications.
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