Surface mount bipolar junction transistor featuring NPN and PNP polarity in a 2-element configuration. This silicon transistor offers a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. With a transition frequency of 300MHz and a minimum hFE of 200, it is suitable for high-frequency applications. Encased in an ultra-small SOT-363 plastic package, it operates within a temperature range of -65°C to 150°C.
Frequency300MHz
PackageSOT-363
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Diodes BC847PN-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
200
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
300MHz
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC847PN-7-F Datasheet
Download the complete datasheet for Diodes BC847PN-7-F to view detailed technical specifications.
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