NPN bipolar junction transistor (BJT) for general-purpose amplification and switching. Features a 30V collector-emitter breakdown voltage (VCEO) and a maximum collector current (IC) of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency (fT) of 300MHz. Encased in a compact TO-236-3 plastic package, suitable for surface mounting. Operates across a wide temperature range from -65°C to 150°C.
PackageTO-236-3
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes BC848A-7-F technical specifications.
General
Package/Case
TO-236-3
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
110
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
30V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC848A-7-F Datasheet
Download the complete datasheet for Diodes BC848A-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
