NPN silicon bipolar junction transistor (BJT) for general-purpose amplification and switching. Features a 30V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a gain bandwidth product (hFE) of 300MHz and a minimum hFE of 110. Housed in a compact SOT-323 plastic package for surface mounting, with a maximum power dissipation of 200mW. Suitable for operation across a wide temperature range from -65°C to 150°C.
Frequency300MHz
PackageSOT-323
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BC848AW-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
110
Length
2.2mm
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
300MHz
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC848AW-7-F Datasheet
Download the complete datasheet for Diodes BC848AW-7-F to view detailed technical specifications.
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