NPN silicon bipolar junction transistor (BJT) for general-purpose amplification and switching. Features a 30V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a gain bandwidth product (hFE) of 300MHz and a minimum hFE of 110. Housed in a compact SOT-323 plastic package for surface mounting, with a maximum power dissipation of 200mW. Suitable for operation across a wide temperature range from -65°C to 150°C.
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Diodes BC848AW-7-F technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 110 |
| Length | 2.2mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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