NPN bipolar junction transistor (BJT) for small signal applications. Features a 30V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 300MHz. Packaged in a SOT-23 surface-mount plastic package, this silicon transistor operates from -65°C to 150°C.
Frequency300MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BC848B-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
200
Lead Free
Lead Free
Length
3.05mm
Max Collector Current
100mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC848B-7-F Datasheet
Download the complete datasheet for Diodes BC848B-7-F to view detailed technical specifications.
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