NPN silicon bipolar junction transistor (BJT) in a SOT-23 surface mount package. Features a 30V collector-emitter breakdown voltage (VCEO) and a 100mA continuous collector current (IC). Offers a minimum DC current gain (hFE) of 420 and a transition frequency (fT) of 300MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 350mW.
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Diodes BC848C-7-F technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 200V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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