PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 65V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a gain bandwidth product of 200MHz, suitable for high-frequency circuits. Packaged in a SOT-23 surface-mount plastic package, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency200MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Diodes BC856A-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-65V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC856A-7-F Datasheet
Download the complete datasheet for Diodes BC856A-7-F to view detailed technical specifications.
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