PNP silicon bipolar junction transistor for surface mount applications. Features a 65V collector-emitter breakdown voltage and 100mA maximum collector current. Offers a 200MHz gain bandwidth product and 200mW power dissipation. Housed in a compact SOT-323 plastic package with tin, matte contact plating. Operates across a wide temperature range of -65°C to 150°C.
Frequency200MHz
PackageSOT-323
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Diodes BC856BW-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
-65V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC856BW-7-F Datasheet
Download the complete datasheet for Diodes BC856BW-7-F to view detailed technical specifications.
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