PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 125 and a transition frequency of 100MHz. Housed in an ultra-small SOT-523 plastic package for surface mounting. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-523
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC857AT-7 technical specifications.
General
| Package/Case | SOT-523 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 0.75mm |
| hFE Min | 125 |
| Lead Free | Contains Lead |
| Length | 1.6mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -50V |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BC857AT-7 Datasheet
Download the complete datasheet for Diodes BC857AT-7 to view detailed technical specifications.
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