The BC857BLP-7B is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It can dissipate up to 250mW of power and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a lead-free, surface mount DFN1006-3 package and is compliant with RoHS and Reach SVHC regulations.
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC857BLP-7B technical specifications.
General
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -650mV |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Gold |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BC857BLP-7B Datasheet
Download the complete datasheet for Diodes BC857BLP-7B to view detailed technical specifications.
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