PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of -45V. Operates with a gain bandwidth product and transition frequency of 100MHz. Housed in an ultra-small, 6-pin plastic package (SOT-363) suitable for surface mounting. Offers a wide operating temperature range from -55°C to 125°C.
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Diodes BC857BS-7-F technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | -45V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | -45V |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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