PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (VCEO) and a 100mA Continuous Collector Current (IC). Operates with a 100MHz Gain Bandwidth Product and a 220 minimum hFE. Housed in an ultra-small, plastic SOT-523 surface mount package.
Diodes BC857BT-7-F technical specifications.
| Package/Case | SOT-523 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 0.75mm |
| hFE Min | 220 |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -50V |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes BC857BT-7-F to view detailed technical specifications.
No datasheet is available for this part.
