
PNP Bipolar Junction Transistor, 100mA max collector current, 45V collector-emitter breakdown voltage. Features a 100MHz gain bandwidth product and a low collector-emitter saturation voltage of -400mV. Housed in an ultra-small SOT-563 plastic package for surface mounting, with dimensions of 1.6mm length, 1.2mm width, and 0.6mm height. Operates across a wide temperature range from -55°C to 150°C, with tin-matte contact plating.
Diodes BC857BV-7 technical specifications.
| Package/Case | SOT-563 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 0.6mm |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.000106oz |
| Width | 1.2mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes BC857BV-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
