PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 package. Features a 45V Collector-Emitter Breakdown Voltage (VCEO) and a 100mA maximum collector current. Offers a high DC current gain (hFE) of 420 and a transition frequency of 200MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 350mW. This surface-mount device is RoHS compliant and lead-free.
Frequency200MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Diodes BC857C-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
hFE Min
420
Lead Free
Lead Free
Length
3.05mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
200MHz
DC Rated Voltage
-45V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC857C-7-F Datasheet
Download the complete datasheet for Diodes BC857C-7-F to view detailed technical specifications.
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