PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 100mA. Operates with a 200MHz transition frequency and a maximum power dissipation of 300mW. Packaged in a SOT-23 surface-mount plastic package, this component is RoHS and REACH SVHC compliant.
Frequency200MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC858A-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
Length
3.05mm
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
200MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC858A-7-F Datasheet
Download the complete datasheet for Diodes BC858A-7-F to view detailed technical specifications.
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