DIODES

BC858AW-7-F

Datasheet

PNP BJT Transistor, 30V VCEO, 100mA IC, 200MHz, SOT-323

Diodes

BC858AW-7-F

Name: BC858AW-7-F Diodes
Brand: Diodes
SKU: BC858AW-7-F

PNP BJT Transistor, 30V VCEO, 100mA IC, 200MHz, SOT-323

PNP Silicon Bipolar Junction Transistor, surface mount, in a 3-pin plastic package (SOT-323). Features a 30V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 125 and a transition frequency of 200MHz. Operates across a wide temperature range from -65°C to 150°C with a power dissipation of 200mW.

Frequency200MHz

PackageSOT-323

MountingSurface Mount

PolarityPNP

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Technical Specifications

Diodes BC858AW-7-F technical specifications.

General

Package/Case	SOT-323
Collector Base Voltage (VCBO)	30V
Collector Emitter Breakdown Voltage	30V
Collector Emitter Voltage (VCEO)	30V
Collector-emitter Voltage-Max	650mV
Contact Plating	Tin, Matte
Emitter Base Voltage (VEBO)	5V
Frequency	200MHz
Gain Bandwidth Product	200MHz
Height	1mm
hFE Min	125
Length	2.2mm
Max Collector Current	100mA
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	200mW
Mount	Surface Mount
Number of Elements	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	PNP
Power Dissipation	200mW
Reach SVHC Compliant	Yes
RoHS Compliant	Yes
Transition Frequency	200MHz
Weight	0.000212oz
Width	1.35mm