PNP Silicon Bipolar Junction Transistor (BJT) for general-purpose amplification and switching. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a 100mA Max Collector Current (IC). Operates with a 200MHz Gain Bandwidth Product (fT) and a 300mW Power Dissipation. Packaged in a SOT-23 surface-mount plastic case, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency200MHz
PackageSOT-23
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BC858B-7-F technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-650mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
-5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1mm
Length
3.05mm
Max Collector Current
100mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BC858B-7-F Datasheet
Download the complete datasheet for Diodes BC858B-7-F to view detailed technical specifications.
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