DIODES

BC858C-7-F

Datasheet

Diodes

BC858C-7-F

Name: BC858C-7-F Diodes
Brand: Diodes
SKU: BC858C-7-F

PNP BJT Transistor, 30V VCEO, 100mA IC, 200MHz fT, SOT-23

PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 420 and a transition frequency of 200MHz. Operates within a temperature range of -65°C to 150°C with a power dissipation of 300mW. Compliant with RoHS standards.

Frequency100MHz

PackageSOT-23

MountingSurface Mount

PolarityPNP

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Technical Specifications

Diodes BC858C-7-F technical specifications.

General

Package/Case	SOT-23
Collector Base Voltage (VCBO)	30V
Collector Emitter Breakdown Voltage	30V
Collector Emitter Saturation Voltage	-650mV
Collector Emitter Voltage (VCEO)	-30V
Collector-emitter Voltage-Max	650mV
Contact Plating	Tin, Matte
Emitter Base Voltage (VEBO)	5V
Gain Bandwidth Product	200MHz
Height	1mm
hFE Min	420
Lead Free	Lead Free
Length	3.05mm
Max Collector Current	100mA
Max Frequency	100MHz
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	300mW
Mount	Surface Mount
Package Quantity	3000
Packaging	Tape and Reel
Polarity	PNP
Power Dissipation	300mW
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Transition Frequency	200MHz
Weight	0.000282oz
Width	1.4mm