PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage (VCEO) and 1A continuous collector current (IC). Operates with a 150MHz transition frequency and 125MHz gain bandwidth product. Housed in a 4-pin SOT-223 plastic package with matte tin plating, offering 2W power dissipation and a maximum operating temperature of 150°C. Lead-free and RoHS compliant.
Frequency150MHz
PackageSOT-223
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Diodes BCP5316TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
125MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
2W
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-80V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCP5316TA Datasheet
Download the complete datasheet for Diodes BCP5316TA to view detailed technical specifications.
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