NPN bipolar junction transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Operates with a transition frequency of 150MHz and a gain bandwidth product of 100MHz. Housed in a SOT-223 surface-mount plastic package, this silicon transistor offers a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C.
Frequency150MHz
PackageSOT-223
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BCP5410TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
100MHz
Height
1.65mm
Length
6.55mm
Max Breakdown Voltage
45V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
Weight
0.000282oz
Width
3.55mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCP5410TA Datasheet
Download the complete datasheet for Diodes BCP5410TA to view detailed technical specifications.
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