NPN bipolar junction transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Operates with a transition frequency of 150MHz and a gain bandwidth product of 100MHz. Housed in a SOT-223 surface-mount plastic package, this silicon transistor offers a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C.
Sign in to ask questions about the Diodes BCP5410TA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes BCP5410TA technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.65mm |
| Length | 6.55mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.000282oz |
| Width | 3.55mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes BCP5410TA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
