NPN silicon bipolar junction transistor for small signal applications. Features a 60V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Operates with a transition frequency of 150MHz and a minimum hFE of 63. Housed in a SOT-223 plastic package for surface mounting, this component offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. Compliant with RoHS and REACH SVHC standards.
Frequency150MHz
PackageSOT-223
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BCP5510TA technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.65mm |
| hFE Min | 63 |
| Lead Free | Lead Free |
| Length | 6.55mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.000282oz |
| Width | 3.55mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes BCP5510TA Datasheet
Download the complete datasheet for Diodes BCP5510TA to view detailed technical specifications.
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