This device is a silicon planar NPN medium-power bipolar transistor in a 4-pin SOT-223 package for AF drivers and output stages. It is rated for 80 V collector-emitter voltage, 100 V collector-base voltage, 5 V emitter-base voltage, 1 A continuous collector current, and 1.5 A peak pulse current. Total power dissipation is 2 W at 25°C ambient, and the junction and storage temperature range is -55°C to +150°C. The BCP56-16 gain group specifies a static forward current transfer ratio of 100 to 250 at 150 mA, and the device has a transition frequency of 125 MHz at 50 mA.
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| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.75 |
| REACH | not_compliant |
| Military Spec | False |
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