NPN bipolar junction transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage (VCEO) and 1A continuous collector current (IC). Operates with a 150MHz transition frequency and 2W power dissipation. Housed in a 4-pin SOT-223 plastic package with matte tin plating.
Frequency150MHz
PackageSOT-223
Current Rating1A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes BCP5616TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
125MHz
Height
1.65mm
Lead Free
Lead Free
Length
6.55mm
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Reach SVHC Compliant
No
RoHS Compliant
No
Transition Frequency
150MHz
DC Rated Voltage
80V
Weight
0.000282oz
Width
3.55mm
Compliance
RoHS
Not Compliant
Datasheet
Diodes BCP5616TA Datasheet
Download the complete datasheet for Diodes BCP5616TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
