Surface mount NPN bipolar junction transistor (BJT) with a 1A continuous collector current rating and 80V collector-emitter breakdown voltage. Features a 150MHz transition frequency, 500mV collector-emitter saturation voltage, and a minimum hFE of 40. Encased in a SOT-223 package, this silicon transistor operates from -55°C to 150°C with a 2W maximum power dissipation. RoHS and Lead Free compliant.
Frequency150MHz
PackageSOT-223
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes BCP56TA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.65mm
hFE Min
40
Lead Free
Lead Free
Length
6.55mm
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
80V
Weight
0.000282oz
Width
3.55mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCP56TA Datasheet
Download the complete datasheet for Diodes BCP56TA to view detailed technical specifications.
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