NPN silicon bipolar junction transistor for small signal applications. Features a 60V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 170MHz transition frequency and a minimum hFE of 2000. Packaged in a SOT-89 surface-mount case with tin, matte plating, suitable for tape and reel packaging. Rated for a maximum power dissipation of 1W and operates within a temperature range of -65°C to 150°C.
PackageSOT-89
Current Rating500mA
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Diodes BCV49TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1V
Contact Plating
Tin, Matte
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
10V
Height
1.5mm
hFE Min
2000
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
170MHz
DC Rated Voltage
60V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCV49TA Datasheet
Download the complete datasheet for Diodes BCV49TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
