The BCW60DTA is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 200mA. It has a gain bandwidth product of 250MHz and a maximum power dissipation of 330mW. The transistor is packaged in a TO-236-3 case and is rated for operation between -55°C and 150°C. It is not RoHS compliant and contains lead.
PackageTO-236-3
Current Rating200mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BCW60DTA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 250MHz |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 32V |
Compliance
| RoHS | Not Compliant |
Datasheet
No datasheet is available for this part.