PNP Silicon Bipolar Junction Transistor for small signal applications. Features a 32V collector-emitter breakdown voltage and a maximum collector current of 200mA. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 330mW. Packaged in a TO-236-3 surface mount case, this transistor offers a transition frequency of 180MHz.
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Diodes BCW61DTA technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector-emitter Voltage-Max | 550mV |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 180MHz |
| Height | 1mm |
| Lead Free | Contains Lead |
| Length | 3.05mm |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 180MHz |
| DC Rated Voltage | -32V |
| Weight | 0.00709oz |
| Width | 1.4mm |
| RoHS | Not Compliant |
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