PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -800mA. Offers a gain bandwidth product of 100MHz and a maximum power dissipation of 330mW. Packaged in a SOT-23 surface-mount case with tin, matte contact plating. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
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Diodes BCW68HTA technical specifications.
| Package/Case | SOT-23 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 300mV |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | -800mA |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 800mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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