PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage and a continuous collector current of -800mA. Offers a gain bandwidth product and transition frequency of 100MHz. Packaged in a SOT-23 (TO-236-3) surface mount case, this 3-pin component operates from -55°C to 150°C with a maximum power dissipation of 330mW.
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Diodes BCW68HTC technical specifications.
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -800mA |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -45V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Not Compliant |
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