NPN bipolar junction transistor featuring a 60V collector-emitter breakdown voltage and 800mA continuous collector current. This silicon transistor offers a 1.25V collector-emitter saturation voltage and 10V emitter-base voltage. Designed for through-hole mounting, it comes in a TO-92 compatible E-LINE package with tin, matte contact plating. Operating across a wide temperature range from -55°C to 150°C, this lead-free and RoHS compliant component has a maximum power dissipation of 1W.
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Diodes BCX38CSTZ technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1.25V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.25V |
| Contact Plating | Tin, Matte |
| Continuous Collector Current | 800mA |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 4.83mm |
| Lead Free | Lead Free |
| Length | 4.78mm |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Weight | 0.016oz |
| Width | 3.66mm |
| RoHS | Compliant |
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