NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage, 1A maximum collector current, and a 150MHz transition frequency. Housed in a SOT-89 surface mount plastic package, this component offers a minimum hFE of 63 and a maximum power dissipation of 1W. It operates within a temperature range of -65°C to 150°C and is RoHS and REACH SVHC compliant.
Frequency150MHz
PackageSOT-89
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BCX5610TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1.5mm
hFE Min
63
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
80V
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
Weight
0.001834oz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Diodes BCX5610TA Datasheet
Download the complete datasheet for Diodes BCX5610TA to view detailed technical specifications.
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