NPN silicon bipolar junction transistor for surface mount applications. Features 80V collector-emitter breakdown voltage (VCEO) and 1A maximum collector current (IC). Offers a 150MHz transition frequency and 40 minimum hFE. Packaged in SOT-89, this component operates from -65°C to 150°C with 1W power dissipation.
Diodes BCX56TA technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.65mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Weight | 0.001834oz |
| Width | 3.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
