
NPN bipolar junction transistor (BJT) in a SOT-89 plastic package, designed for surface mount applications. Features a maximum continuous collector current of 1A and a collector-emitter breakdown voltage of 20V. Offers a gain bandwidth product of 100MHz, a minimum hFE of 160, and a maximum power dissipation of 1W. Operates within a temperature range of -65°C to 150°C.
Diodes BCX6825TA technical specifications.
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