
PNP Bipolar Junction Transistor (BJT) in SOT-89 package. Features a 20V collector-emitter breakdown voltage and a maximum continuous collector current of -1A. Offers a minimum DC current gain (hFE) of 160 and a transition frequency of 100MHz. Designed for surface mounting with tin, matte contact plating. Operating temperature range from -65°C to 150°C.
Diodes BCX6925TA technical specifications.
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