PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector Base Voltage (VCBO) and 100V Collector Emitter Breakdown Voltage. Offers a maximum collector current of 50mA and a transition frequency of 100MHz. Packaged in a TO-236-3 surface mount case, this component operates within a temperature range of -65°C to 150°C.
PackageTO-236-3
Current Rating-50mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes BF621TA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.6mm |
| Lead Free | Contains Lead |
| Length | 4.6mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -300V |
| Weight | 0.004603oz |
| Width | 2.6mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BF621TA Datasheet
Download the complete datasheet for Diodes BF621TA to view detailed technical specifications.
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