NPN RF small signal bipolar transistor for ultra-high frequency band applications. Features a 600MHz gain bandwidth product and transition frequency. Operates with a continuous collector current of 100mA and a collector-emitter voltage of 15V. Packaged in a TO-236-3 surface mount case, this silicon transistor offers a maximum power dissipation of 330mW and operates across a temperature range of -55°C to 150°C.
PackageTO-236-3
Current Rating100mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes BFQ31ATA technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector-emitter Voltage-Max | 15V |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 600MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 600MHz |
| DC Rated Voltage | 15V |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes BFQ31ATA Datasheet
Download the complete datasheet for Diodes BFQ31ATA to view detailed technical specifications.
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