N-Channel Silicon JFET, 200V Drain-Source Voltage (Vdss), 120mA Continuous Drain Current (ID). Features 30 Ohm Max Drain-Source On-Resistance (Rds On), 15 Ohm Drain-Source Resistance. Operates across a -55°C to 150°C temperature range with 500mW power dissipation. Packaged in a TO-92 compatible E-LINE package for through-hole mounting. Lead-free and RoHS compliant.
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Diodes BS107PSTZ technical specifications.
| Package/Case | TO-92-3 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 120mA |
| Current Rating | 120mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 15R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 30R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 200V |
| Weight | 0.016oz |
| RoHS | Compliant |
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