N-Channel Silicon JFET, 200V Drain-Source Voltage (Vdss), 120mA Continuous Drain Current (ID). Features 30 Ohm Max Drain-Source On-Resistance (Rds On), 15 Ohm Drain-Source Resistance. Operates across a -55°C to 150°C temperature range with 500mW power dissipation. Packaged in a TO-92 compatible E-LINE package for through-hole mounting. Lead-free and RoHS compliant.
PackageTO-92-3
Current Rating120mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes BS107PSTZ technical specifications.
General
Package/Case
TO-92-3
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
120mA
Current Rating
120mA
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
15R
Drain to Source Voltage (Vdss)
200V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Rds On Max
30R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
DC Rated Voltage
200V
Weight
0.016oz
Compliance
RoHS
Compliant
Datasheet
Diodes BS107PSTZ Datasheet
Download the complete datasheet for Diodes BS107PSTZ to view detailed technical specifications.
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