N-Channel Silicon Metal-Oxide Semiconductor FET for surface mount applications. Features a 60V Drain-Source Voltage (Vdss) and a 150mA continuous drain current. Offers a low Drain-Source On Resistance (Rds On) of 5 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 330mW. Packaged in a SOT-23-3 with tin, matte contact plating.
PackageSOT-23-3
Current Rating150mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BS170FTA technical specifications.
General
Package/Case
SOT-23-3
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
150uA
Current Rating
150mA
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Dual Supply Voltage
60V
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
330mW
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Weight
0.000282oz
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Diodes BS170FTA Datasheet
Download the complete datasheet for Diodes BS170FTA to view detailed technical specifications.
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