N-channel silicon JFET with 60V drain-source breakdown voltage and 270mA continuous drain current. Features 5 Ohm drain-source on-resistance and 3V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 625mW. Packaged in a TO-92 compatible E-line package, supporting through-hole and surface mount configurations. RoHS compliant.
PackageTO-92-3
Current Rating270mA
MountingThrough Hole, Surface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes BS170P technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
270mA
Current Rating
270mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
60pF
Lead Free
Lead Free
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole, Surface Mount
Nominal Vgs
3V
Number of Channels
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
10ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Weight
0.016oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes BS170P Datasheet
Download the complete datasheet for Diodes BS170P to view detailed technical specifications.
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