N-channel silicon JFET with 60V drain-source breakdown voltage and 270mA continuous drain current. Features 5 Ohm drain-source on-resistance and 3V threshold voltage. Operates from -55°C to 150°C with a maximum power dissipation of 625mW. Packaged in a TO-92 compatible E-line package, supporting through-hole and surface mount configurations. RoHS compliant.
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Diodes BS170P technical specifications.
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 270mA |
| Current Rating | 270mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole, Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Rds On Max | 5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 60V |
| Weight | 0.016oz |
| Width | 1.4mm |
| RoHS | Compliant |
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